Stress distribution measurement <Micro Laser Raman Spectroscopic Analysis>
An example of measuring the stress distribution around an indentation made on SiC used in semiconductors! Analyzed with visible light laser.
Our company conducts stress distribution measurement using micro laser Raman spectroscopy. Residual stress can have various adverse effects on products, such as deformation and failure. There are several measurement methods available, and Raman spectroscopy is one effective means. In the related link, we present examples of stress distribution measurements around indentations made on SiC used in semiconductors, along with graphs and photographs. 【Features】 ■ Analysis equipment: RAMAN ■ Analysis method: Visible light laser ■ Analysis target: Raman-active materials (semiconductors, carbon, polymers, etc.) ■ Surface resolution: Approximately 1μm *For more details, please refer to the related link or feel free to contact us.
- Company：大同分析リサーチ
- Price：Other
